The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Dec. 12, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sanghoon Lee, Seongnam-si, KR;
Sunggil Kim, Yongin-si, KR;
Seulye Kim, Seoul, KR;
Hwaeon Shin, Suwon-si, KR;
Joonsuk Lee, Seoul, KR;
Hyeeun Hong, Bucheon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Disclosed are three-dimensional semiconductor memory devices and methods of fabricating the same. The method includes sequentially forming a sacrificial pattern and a source conductive layer on a substrate, forming a mold structure including a plurality of insulating layers and a plurality of sacrificial layers on the source conductive layer; forming a plurality of vertical structures that penetrate the mold structure, forming a trench that penetrates the mold structure, forming a sacrificial spacer on a sidewall of the trench, removing the sacrificial pattern to form a horizontal recess region; removing the sacrificial spacer, and forming a source conductive pattern that fills the horizontal recess region.