The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Dec. 11, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Takeshi Okagaki, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 27/02 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H03K 5/134 (2014.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/0207 (2013.01); H01L 29/0657 (2013.01); H03K 5/134 (2014.07);
Abstract
The semiconductor device includes a first inverter and a second inverter which is connected thereto in series. Each of the first and the second inverters includes a p-channel transistor and an n-channel transistor, respectively. The number of projection semiconductor layers each as the active region of the p-channel and the n-channel transistors of the second inverter is smaller than the number of the projection semiconductor layers each as the active region of the p-channel and the n-channel transistors of the first inverter.