Semiconductor device and fabrication method thereof

Abstract

The present disclosure provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a semiconductor substrate including a high-frequency-block group and a low-power-block group; high-frequency-type logic standard cells located on the high-frequency-block group, and having a high-frequency-type cell height, a high-frequency-type operating frequency, and a high-frequency-type power; low-power-type logic standard cells located on the low-power-block group, and having a low-power-type cell height, a low-power-type operating frequency, and a low-power-type power. The high-frequency-type cell height is higher than the low-power-type cell height. The high-frequency-type operating frequency is greater than the low-power-type operating frequency. The high-frequency-type power is greater than the low-power-type power. The high-frequency-type logic standard cells include high-frequency-type fins, and the low-power-type logic standard cells include low-power-type fins. An effective height of the high-frequency-type fins is greater than an effective height of the low-power-type fins.