The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Aug. 08, 2018
Applicant:

Microchip Technology Incorporated, Chandler, AZ (US);

Inventor:

Man Kit Lam, Colorado Springs, CO (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 25/00 (2006.01); H01L 25/16 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49568 (2013.01); H01L 21/4825 (2013.01); H01L 21/4828 (2013.01); H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 23/4952 (2013.01); H01L 23/49513 (2013.01); H01L 23/49524 (2013.01); H01L 23/49548 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/49582 (2013.01); H01L 23/49589 (2013.01); H01L 25/16 (2013.01); H01L 25/50 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/16258 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/18161 (2013.01);
Abstract

Methods are provided for forming an IC power package including a power MOSFET device, a microprocessor/driver, and/or other discrete electronics. A lead frame may be etched to form a half-etch lead frame defining component attach structures at the top side of the lead frame. A power MOSFET may be mounted to a die attach pad defined in the half-etch lead frame, and the structure may be overmolded. The top of the overmolded structure may be grinded to reduce a thickness of the power MOSFET and expose a top surface of the MOSFET through the surrounding mold compound. A conductive contact may be formed on a top surface of the MOSFET. Selected portions of the half-etch lead frame may be etched from the bottom-up to separate the MOSFET from other package components, and to define a plurality of package posts for solder-mounting the package to a PCB.


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