The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Sep. 12, 2019
Applicant:
The Texas State University—san Marcos, San Marcos, TX (US);
Inventor:
Edwin L. Piner, New Braunfels, TX (US);
Assignee:
The Texas State University—San Marcos, San Marcos, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02647 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02639 (2013.01); H01L 29/0665 (2013.01);
Abstract
The disclosure relates to a method for creating a nanoscale structure. The method includes forming a window in a semiconductor structure, the semiconductor structure comprising a substrate, a first semiconductor layer, and a mask layer; depositing a second semiconductor layer within the window such that a gap remains between the second semiconductor and a portion of the window; and regrowing the first semiconductor layer such that the first semiconductor layer fills the gap.