The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Mar. 16, 2020
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
David Charles Smith, Lake Oswego, OR (US);
Dennis M. Hausmann, Lake Oswego, OR (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); H01L 21/3105 (2006.01); C23C 16/02 (2006.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/02 (2013.01); C23C 16/0272 (2013.01); C23C 16/04 (2013.01); C23C 16/401 (2013.01); C23C 16/402 (2013.01); C23C 16/45525 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/02315 (2013.01); H01L 21/3105 (2013.01); H01L 21/32 (2013.01);
Abstract
Methods and apparatuses for selectively depositing oxide on an oxide surface relative to a nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing oxide on an oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing oxide on an exposed nitride surface.