The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Oct. 17, 2017
Applicant:
Wisys Technology Foundation, Inc., Madison, WI (US);
Inventors:
Charles D Nelson, Saint Paul, MN (US);
Harold T Evensen, Verona, WI (US);
Assignee:
WISYS TECHNOLOGY FOUNDATION, INC., Madison, WI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 21/10 (2006.01); H01J 9/02 (2006.01); H01J 19/24 (2006.01); H01J 19/38 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01J 1/304 (2006.01); H01J 19/82 (2006.01); H01J 9/18 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
H01J 21/105 (2013.01); H01J 1/304 (2013.01); H01J 9/025 (2013.01); H01J 9/18 (2013.01); H01J 19/24 (2013.01); H01J 19/38 (2013.01); H01J 19/82 (2013.01); H01L 51/0017 (2013.01); H01L 51/0045 (2013.01); H01L 51/0048 (2013.01); H01L 51/055 (2013.01); H01L 51/0558 (2013.01); H01L 51/105 (2013.01);
Abstract
A field emission transistor uses carbon nanotubes positioned to extend along a substrate plane rather than perpendicularly thereto. The carbon nanotubes may be pre-manufactured and applied to the substrate and then may be etched to create a gap between the carbon nanotubes and an anode through which electrons may flow by field emission. A planar gate may be positioned beneath the gap to provide a triode structure.