The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Dec. 21, 2018
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Xiang-Zheng Bo, Plano, TX (US);
Vijaya Subramaniam Vemuri, Dallas, TX (US);
Corey Rollin O'Brien, Frisco, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/16 (2006.01); H01L 27/11517 (2017.01); G11C 16/04 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/0416 (2013.01); G11C 16/30 (2013.01); H01L 27/11517 (2013.01);
Abstract
In some examples, a flash memory comprises a first gate and a second gate located over a semiconductor substrate a third gate located between the first gate and the second gate a floating gate located between the third gate and the semiconductor substrate; and a doped region located within the semiconductor substrate and proximate the second gate, wherein the doped region is configured to receive a positive bias voltage with respect to the semiconductor substrate during an erase cycle.