The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10901282 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 26, 2021

Filed:

Oct. 01, 2018
Applicant:

Wuhan China Star Optoelectronics Technology Co., Ltd., Hubei, CN;

Inventors:

Gaiping Lu, Guangdong, CN;

Jiawei Zhang, Guangdong, CN;

Wei Tang, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); G02F 1/1343 (2006.01); H01L 29/786 (2006.01); G02F 1/1362 (2006.01); H01L 27/12 (2006.01); H01L 21/768 (2006.01); G02F 1/1333 (2006.01); H01L 29/66 (2006.01); G06F 3/041 (2006.01);
U.S. Cl.
CPC ...
G02F 1/136227 (2013.01); G02F 1/1368 (2013.01); G02F 1/13338 (2013.01); G02F 1/13439 (2013.01); H01L 21/76802 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 27/1244 (2013.01); H01L 27/1248 (2013.01); H01L 27/1262 (2013.01); H01L 29/66757 (2013.01); H01L 29/78603 (2013.01); H01L 29/78636 (2013.01); H01L 29/78675 (2013.01); G02F 1/136204 (2013.01); G02F 2001/13685 (2013.01); G02F 2202/104 (2013.01); G06F 3/041 (2013.01); G06F 2203/04103 (2013.01);
Abstract

The present disclosure provides a thin film transistor (TFT) substrate and a manufacturing method thereof. The TFT substrate include a TFT; a flat layer to cover the TFT; an opening hole defined in the flat layer and corresponding to a drain of the TFT; a bottom of the opening hole to retain a part of the flat layer for forming a flat layer sheet; a first metal layer formed on the flat layer; a first insulating layer formed on the first metal; a second metal formed on the first insulating layer and pass through the flat layer sheet for electrically connecting to the drain.


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Lu, Gaiping. (2021). Thin film transistor substrate and manufacturing method thereof (U.S. Patent No. 10901282). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10901282

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