The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Jun. 09, 2017
The Regents of the University of California, Oakland, CA (US);
Chee Wei Wong, Los Angeles, CA (US);
Baicheng Yao, Los Angeles, CA (US);
Yuan Liu, Los Angeles, CA (US);
Xiangfeng Duan, Los Angeles, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Methods and apparatus for providing all-optically generated, on-chip propagated and high-efficiency tunable plasmons are described. The plasmon generating apparatus includes a graphene based silicon nitride waveguide (GSiNW) utilizing 'C+L' band light sources and detectors that take advantage of the surface 2nd nonlinearity on graphene. The optical generation is accomplished via one or more optical communication lasers through the difference-frequency generation process. The THz frequency and intensity is tunable via an external gate voltage. Using such a device the optical to THz conversion may be made at least an order of magnitude more efficient than prior THz sources, and can be used to make chip-scale room-temperature THz sources, switches, modulators and detectors based on graphene.