The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Apr. 30, 2019
Hrl Laboratories, Llc, Malibu, CA (US);
Edward H. Chen, Woodland Hills, CA (US);
Matthew J. Pelliccione, Santa Monica, CA (US);
David T. Chang, Calabasas, CA (US);
Raviv Perahia, Agoura Hills, CA (US);
Biqin Huang, Torrance, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
An atomic defect sensor for measuring a magnitude of a physical parameter comprises an optical waveguide comprising an atomic defect site located within the optical waveguide, the optical waveguide being configured to guide an optical signal toward the atomic defect site, a first doped fin integrated with the optical waveguide at a first side of the optical waveguide, and a second doped fin integrated with the optical waveguide at a second side of the optical waveguide, wherein the atomic defect site is configured to be energetically stimulated by the optical signal in the presence of an RF signal, and to generate a photocurrent corresponding to the magnitude of the physical parameter and a voltage differential between the first and second doped fins.