The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Mar. 27, 2017
Applicant:

Tohoku University, Sendai, JP;

Inventors:

Shuji Tanaka, Sendai, JP;

Joerg Froemel, Sendai, JP;

Assignee:

Tohoku University, Miyagi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/12 (2006.01); B81C 1/00 (2006.01); G01L 23/12 (2006.01); H01L 41/113 (2006.01); H04R 7/04 (2006.01); H04R 19/00 (2006.01); H04R 19/04 (2006.01); H04R 31/00 (2006.01); G01L 9/00 (2006.01);
U.S. Cl.
CPC ...
G01L 9/12 (2013.01); B81C 1/0015 (2013.01); G01L 9/00 (2013.01); G01L 23/12 (2013.01); H01L 41/1132 (2013.01); H01L 41/1136 (2013.01); H04R 7/04 (2013.01); H04R 19/00 (2013.01); H04R 19/005 (2013.01); H04R 19/04 (2013.01); H04R 31/00 (2013.01); H04R 31/003 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0264 (2013.01); H04R 2201/003 (2013.01);
Abstract

Provided are a pressure sensor which exhibits exceptional performance and a method of producing the same. The pressure sensor includes: a silicon substrate having a cavity; a diaphragm which is formed of a metallic glass and has a tensile stress in a range in which a resonant frequency is higher than an audible range; and a counter electrode which is insulated from the diaphragm and has a plurality of holes. The diaphragm and the counter electrode are disposed on the silicon substrate to face each other with a gap therebetween, the diaphragm and the counter electrode being released from the silicon substrate by the cavity.


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