The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Dec. 27, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Soyoung Lee, Suwon-si, KR;

Jaesoon Lim, Seoul, KR;

Jieun Yun, Hwaseong-si, KR;

Akio Saito, Tokyo, JP;

Tsubasa Shiratori, Tokyo, JP;

Yutaro Aoki, Tokyo, JP;

Assignees:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Adeka Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); C07F 11/00 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
C23C 16/30 (2013.01); C07F 11/00 (2013.01); C23C 16/405 (2013.01); C23C 16/45553 (2013.01);
Abstract

Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R, R, and Rindependently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; Rand Rindependently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of Rand Rare provided in two. Two Rs are independently of each other, and two Rs are independently of each other.


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