The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Aug. 31, 2017
Applicant:
Nanyang Technological University, Singapore, SG;
Inventors:
Xuechao Yu, Singapore, SG;
Peng Yu, Singapore, SG;
Qijie Wang, Singapore, SG;
Zheng Liu, Singapore, SG;
Assignee:
Nanyang Technological University, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/02 (2006.01); C23C 14/22 (2006.01); C23C 14/00 (2006.01); C30B 29/46 (2006.01); C30B 33/06 (2006.01); C23C 14/06 (2006.01); H01L 31/032 (2006.01); H01L 31/0272 (2006.01);
U.S. Cl.
CPC ...
C23C 14/228 (2013.01); C23C 14/0005 (2013.01); C23C 14/0623 (2013.01); C23C 14/0629 (2013.01); C30B 29/46 (2013.01); C30B 33/06 (2013.01); H01L 31/0272 (2013.01); H01L 31/032 (2013.01);
Abstract
A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MC. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.