The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

May. 05, 2020
Applicant:

Brigham Young University, Provo, UT (US);

Inventors:

Robert C. Davis, Provo, UT (US);

Richard Vanfleet, Provo, UT (US);

Assignee:

CNT Holdings, LLC, Provo, UT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01); B82Y 15/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
B81C 1/00666 (2013.01); B81B 3/0072 (2013.01); B81C 1/00619 (2013.01); B81B 2201/025 (2013.01); B82Y 15/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01);
Abstract

A method for forming a microscale device may include growing, by a chemical vapor deposition, a patterned forest of vertically aligned carbon nanotubes, wherein the patterned forest defines a component of the microscale device, and applying a conformal non-metal coating to the vertically aligned carbon nanotubes throughout the patterned forest, wherein the conformal non-metal coating comprises a substantially uniform thickness along a length of the vertically aligned carbon nanotubes. The method may also include connecting adjacent vertically aligned carbon nanotubes together with the conformal non-metal coating without filling interstices between the adjacent vertically aligned carbon nanotubes, wherein the connecting of the vertically aligned carbon nanotubes is configured to increase a strength of the vertically aligned carbon nanotubes of the patterned forest above a threshold level to withstand forces applied during a wet etching process, and infiltrating the interstices between the adjacent vertically aligned carbon nanotubes with a metallic material.


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