The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Jun. 15, 2018
Spts Technologies Limited, Newport, GB;
SPTS Technologies Limited, Newport, GB;
Abstract
A method is for manufacturing a plurality of silicon microneedles which have a bevelled tip. The method includes providing a silicon substrate having a front face and a rear face, forming a first mask arrangement on the front face of the substrate, the first mask arrangement defining one or more gaps, and performing a SFbased plasma etch of the front face through the gaps in the first mask arrangement to provide one or more etch features having a sloping face. The SFbased plasma etch undercuts the first mask arrangement with an undercut that is at least 10% of the depth of a corresponding etch feature. The method further includes forming a second mask arrangement on the etch features to define locations of the microneedles, in which the second mask arrangement is located entirely on sloping faces of the etch features, and performing a DRIE (deep reactive ion etch) anisotropic plasma etch of the etched front face of the substrate to form a plurality of microneedles which have a bevelled tip, where the sloping faces of the etch features at least in part give rise to the bevelled tips of the microneedles.