The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
Feb. 26, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Yoshisato Yokoyama, Tokyo, JP;
Toshiaki Sano, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/412 (2006.01); H03K 17/14 (2006.01); G11C 11/418 (2006.01); H03K 17/284 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
H03K 17/145 (2013.01); G11C 11/412 (2013.01); G11C 11/418 (2013.01); G11C 11/419 (2013.01); H03K 17/284 (2013.01);
Abstract
A MOS transistor is allowed to recover from BTI degradation even when an operation mode signal is inactive. A semiconductor device includes a drive circuit coupled to a controlled circuit via a delay element. The drive circuit includes first and second MOS transistors coupled in series to each other. The first MOS transistor is controlled to be in an OFF state when the operation mode signal is active. When the operation mode signal is inactive, the first MOS transistor is controlled to be in the OFF state at least temporarily while the second MOS transistor is controlled to be in the OFF.