The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

Nov. 27, 2019
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Soichi Oikawa, Hachioji Tokyo, JP;

Yushi Kato, Chofu Tokyo, JP;

Hiroaki Yoda, Kawasaki Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01F 10/3259 (2013.01); H01L 27/228 (2013.01); H01L 43/10 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01);
Abstract

According to one embodiment, a magnetic memory device includes a first magnetic region, a first counter magnetic region, and a first nonmagnetic region provided between the first magnetic region and the first counter magnetic region. The first magnetic region includes a first magnetic film, a second magnetic film, and an intermediate film. The first magnetic film is provided between the second magnetic film and the first nonmagnetic region. The intermediate film includes Ru and is provided between the first magnetic film and the second magnetic film. A distance along a first direction between the first magnetic film and the second magnetic film is not less than 1.8 nm and not more than 2.2 nm. The first direction is from the first counter magnetic region toward the first magnetic region.


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