The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
Aug. 05, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
John J. Ellis-Monaghan, Grand Isle, VT (US);
Jeffrey P. Gambino, Gresham, OR (US);
Mark D. Jaffe, Shelburne, VT (US);
Kirk D. Peterson, Jericho, VT (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/103 (2006.01); H01L 31/028 (2006.01); H01L 31/0232 (2014.01); G02B 6/12 (2006.01); H01P 1/17 (2006.01); H01L 31/02 (2006.01); H01P 3/16 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1808 (2013.01); G02B 6/12 (2013.01); G02B 6/12004 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/103 (2013.01); H01L 31/1864 (2013.01); H01L 31/1872 (2013.01); H05K 999/99 (2013.01); H01L 31/02005 (2013.01); H01L 2223/6627 (2013.01); H01P 1/172 (2013.01); H01P 3/16 (2013.01); Y02E 10/50 (2013.01);
Abstract
Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.