The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
Dec. 21, 2018
Fuji Electric Co., Ltd., Kanagawa, JP;
Daisuke Ozaki, Okaya, JP;
Ryouichi Kawano, Matsumoto, JP;
Abstract
A semiconductor device is provided comprising an active portion and a terminating structure. The semiconductor device is provided comprising the active portion provided in the semiconductor substrate and a terminating structure provided at a termination of the front surface side of the semiconductor substrate and that mitigates an electric field of the termination. In the electric field distribution of the front surface side of the terminating structure, during rated voltage application, an electric field at the end portion of the active portion side may be smaller than a maximum value of an electric field distribution of the front surface side. In addition, the electric field distribution of the terminating structure may have a maximum peak of the electric field on the edge side opposite to the active portion with respect to a center of the terminating structure.