The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
Oct. 24, 2018
Applicant:
Fuji Electric Co., Ltd., Kawasaki, JP;
Inventor:
Takumi Fujimoto, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/167 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02236 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 29/167 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/66136 (2013.01); H01L 29/66143 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01);
Abstract
An inverter circuit is connected serially with a first silicon carbide MOSFET and a second silicon carbide MOSFET. During a dead time when the first silicon carbide MOSFET and the second silicon carbide MOSFET are OFF, transient current of at least 100 A/cm2 flows in a built-in diode of the first silicon carbide MOSFET and a built-in diode of the second silicon carbide MOSFET.