The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

Apr. 12, 2019
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jagar Singh, Clifton Park, NY (US);

Shiv Kumar Mishra, Mechanicville, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0623 (2013.01); H01L 27/0629 (2013.01); H01L 29/0646 (2013.01); H01L 29/872 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to high voltage diode structures and methods of manufacture. The structure includes: a diode structure composed of first well of a first dopant type in a substrate; and a well ring structure of the first dopant type in the substrate which completely surrounds the first well of the first dopant type, and spaced a distance 'x' from the first well to cut a leakage path to a shallower second well of a second dopant type.


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