The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

Sep. 07, 2016
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Takuro Ohmaru, Fukuoka, JP;

Naoto Kusumoto, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/335 (2011.01); H01L 27/146 (2006.01); H01L 31/0272 (2006.01); H04N 5/3745 (2011.01); H04N 5/32 (2006.01); H04N 5/353 (2011.01); H04N 5/378 (2011.01); H04N 5/225 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14616 (2013.01); H01L 27/14603 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H01L 31/0272 (2013.01); H04N 5/2253 (2013.01); H04N 5/32 (2013.01); H04N 5/3532 (2013.01); H04N 5/378 (2013.01); H04N 5/37452 (2013.01); H04N 5/37457 (2013.01);
Abstract

An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A node AN (a first charge retention portion), a node FD (a second charge retention portion), and a node FDX (the charge detection portion) are provided. Imaging data obtained in the node AN is transferred to the node FD, and the imaging data is sequentially transferred from the node FD to the node FDX to be read.


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