The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

Jun. 01, 2018
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Masahiro Kobayashi, Tokyo, JP;

Hiroshi Sekine, Kawagoe, JP;

Yusuke Onuki, Fujisawa, JP;

Toru Koizumi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H04N 5/353 (2011.01); H04N 5/232 (2006.01); H04N 5/3745 (2011.01); H01L 21/74 (2006.01); G06T 7/593 (2017.01); G06K 9/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H04N 5/232 (2013.01); H04N 5/23229 (2013.01); H04N 5/353 (2013.01); H04N 5/37452 (2013.01); G06K 9/00791 (2013.01); G06T 7/593 (2017.01); G06T 2207/10012 (2013.01); H01L 21/74 (2013.01);
Abstract

An imaging apparatus includes a photoelectric conversion unit of a first conductivity type, a charge holding unit of the first conductivity type, the charge holding unit being configured to hold electric charges transferred from the photoelectric conversion unit, a floating diffusion unit of the first conductivity type, the floating diffusion unit being configured to receive electric charges transferred from the charge holding unit, a punch-through prevention layer of a second conductivity type, the punch-through prevention layer being disposed between the charge holding unit and the floating diffusion unit to contact the floating diffusion unit, and a transfer assistance layer of the first conductivity type, the transfer assistance layer being disposed between the punch-through prevention layer and a surface of a semiconductor substrate.


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