The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

Jun. 11, 2019
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Young-Wook Lee, Suwon-si, KR;

Woo-Geun Lee, Yongin-si, KR;

Ki-Won Kim, Suwon-si, KR;

Hyun-Jung Lee, Yangju-si, KR;

Ji-Soo Oh, Uiwang-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 21/76834 (2013.01); H01L 27/127 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 27/1262 (2013.01); H01L 27/1288 (2013.01); H01L 29/78693 (2013.01); H01L 29/7869 (2013.01);
Abstract

A substrate including a gate line and a gate electrode disposed on a substrate, an oxide semiconductor layer pattern overlapping the gate electrode, a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer pattern, a data line intersecting the gate line, a source electrode electrically connected to the oxide semiconductor layer pattern, a drain electrode electrically connected to the oxide semiconductor layer, the drain electrode spaced apart from the source electrode, and an insulating pattern including a first portion, which is disposed between the gate line and the data line and at least partially overlaps with both of the gate line and the data line.


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