The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
May. 10, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Brent A. Anderson, Jericho, VT (US);
Edward J. Nowak, Essex Junction, VT (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/764 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823487 (2013.01); H01L 21/28518 (2013.01); H01L 21/764 (2013.01); H01L 21/823418 (2013.01); H01L 21/823425 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 27/088 (2013.01); H01L 29/0653 (2013.01); H01L 29/4238 (2013.01); H01L 29/42392 (2013.01); H01L 29/665 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01);
Abstract
Vertical field effect transistors (FETs) with minimum pitch and methods of manufacture are disclosed. The structure includes at least one vertical fin structure and gate material contacting with the at least one vertical fin structure. The structure further includes metal material in electrical contact with the ends of the at least one vertical fin.