The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

Mar. 01, 2019
Applicant:

Arm Limited, Cambridge, GB;

Inventors:

Andy Wangkun Chen, Austin, TX (US);

Rahul Mathur, Austin, TX (US);

Cyrille Nicolas Dray, Antibes, FR;

Yann Sarrazin, Sophia Antipolis, FR;

Julien Vincent Poitrat, Mougins, FR;

Yannis Jallamion-Grive, Mouans Sartoux, FR;

Pranay Prabhat, Cambridge, GB;

James Edward Myers, Bottisham, GB;

Graham Peter Knight, Cambridge, GB;

Jonas {hacek over (S)}vedas, Cambridge, GB;

Assignee:

Arm Limited, Cambridge, GB;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01); G11C 11/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/005 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01);
Abstract

Briefly, embodiments of claimed subject matter relate to adjusting, such as extending, a clock signal to permit completion of a write operations to a first memory type and/or to permit completion of read operations from a second memory type, wherein the first memory type and the second memory type are dissimilar from each other. In certain embodiments, the first memory type may comprise a magnetic random-access memory (MRAM) cell array, and the second memory type may comprise a static random-access memory (SRAM) cell array.


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