The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

Oct. 02, 2018
Applicant:

Facebook Technologies, Llc, Menlo Park, CA (US);

Inventors:

Niv Kantor, San Francisco, CA (US);

Ricardo Garcia, San Mateo, CA (US);

Nadav Grossinger, Foster City, CA (US);

Nitay Romano, Sunnyvale, CA (US);

Assignee:

Facebook Technologies, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06T 7/521 (2017.01); G06T 7/73 (2017.01);
U.S. Cl.
CPC ...
G06T 7/521 (2017.01); G06T 7/74 (2017.01); G06T 2207/10152 (2013.01); G06T 2207/30244 (2013.01);
Abstract

In one embodiment, a system includes at least one projector configured to project a plurality of projected patterns onto a scene, the projected patterns including a first projected pattern that includes a plurality of first projected features, a camera configured to capture a plurality of images including a first detected pattern corresponding to a reflection of the first projected pattern, and one or more processors configured to: compute a depth map of the scene based on the first projected pattern, the first detected pattern, and relative positions of the camera and the at least one projector, project, using the projector, a second projected pattern comprising a plurality of second projected features onto a portion of the scene, where the second projected pattern is more sparse than the first projected pattern, and capture, using the camera, a second detected pattern corresponding to a reflection of the second projected pattern.


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