The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

Nov. 14, 2019
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Andreas Martin, Munich, DE;

Daniel Beckmeier, Unterhaching, DE;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/392 (2020.01); G06F 111/20 (2020.01); G06F 119/06 (2020.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); G06F 2111/20 (2020.01); G06F 2119/06 (2020.01);
Abstract

A method for the computer-aided characterization of a circuit comprising a semiconductor layer and a semiconductor component region embedded in the semiconductor layer in an electrically insulated manner, wherein the semiconductor component region is optionally coupled to a dielectric layer structure to be protected, the method comprising determining an indication representing vis-à-vis the semiconductor layer an intensity of an electrical charging of the semiconductor component region by a production process used to produce the circuit, wherein a physical construction of the semiconductor component region is taken into account when determining the indication, and classifying the semiconductor component region taking account of the indication.


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