The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

May. 24, 2019
Applicant:

The United States of America As Represented BY the Secretary of the Navy, Newport, RI (US);

Inventors:

Charles J Patrissi, Newport, RI (US);

Joseph H Fontaine, North Kingstown, RI (US);

Jian Tan, New York, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/392 (2019.01); G01R 31/385 (2019.01); H01M 10/48 (2006.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
G01R 31/392 (2019.01); G01R 31/386 (2019.01); H01M 10/0525 (2013.01); H01M 10/48 (2013.01);
Abstract

A method for testing an internal short circuits in an electrochemical cell is provided. A transistor is implanted in the cell, and it is electrically connected to a controllable voltage source. The transistor is joined between positive and negative components of the cell. The transistor is maintained at high resistance before start of testing. The voltage source is used to reduce electrical resistance in the transistor to simulate an internal short circuit in the electrochemical cell. Thermal runaway propagation in the cell is measured.


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