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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10894744 B1

PDFFull Text
Date of Patent:
Jan. 19, 2021

Filed:

Jun. 26, 2017

Oxide sintered material and method for manufacturing the same, sputtering target, and method for manufacturing semiconductor device

Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Miki Miyanaga, Itami, JP;

Kenichi Watatani, Itami, JP;

Hideaki Awata, Itami, JP;

Kazuya Tokuda, Itami, JP;

Aiko Tominaga, Itami, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Attorneys:

Baker Botts L.L.P.

Michael A. Sartori

Primary Examiner:

William Coleman

Int. Cl.
CPC ...
C04B 35/01 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
C04B 35/01 (2013.01); C23C 14/086 (2013.01); C23C 14/3407 (2013.01); H01L 21/02565 (2013.01); C04B 2235/326 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); H01L 29/7869 (2013.01);
Abstract

Provided are: an oxide sintered material including an InOcrystal phase, a ZnInOcrystal phase and a ZnWOcrystal phase, wherein the roundness of crystal particles composed of the ZnWOcrystal phase is 0.01 or more and less than 0.7; a method for producing the oxide sintered material; and a method for manufacturing a semiconductor device including an oxide semiconductor film that is formed by using the oxide sintered material as a sputter target.

Find Patent Forward Citations

Miyanaga, Miki. (2021). Oxide sintered material and method for manufacturing the same, sputtering target, and method for manufacturing semiconductor device (U.S. Patent No. 10894744). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10894744

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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