The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
Jun. 26, 2017
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Miki Miyanaga, Itami, JP;
Kenichi Watatani, Itami, JP;
Hideaki Awata, Itami, JP;
Kazuya Tokuda, Itami, JP;
Aiko Tominaga, Itami, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/01 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
C04B 35/01 (2013.01); C23C 14/086 (2013.01); C23C 14/3407 (2013.01); H01L 21/02565 (2013.01); C04B 2235/326 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); H01L 29/7869 (2013.01);
Abstract
Provided are: an oxide sintered material including an InOcrystal phase, a ZnInOcrystal phase and a ZnWOcrystal phase, wherein the roundness of crystal particles composed of the ZnWOcrystal phase is 0.01 or more and less than 0.7; a method for producing the oxide sintered material; and a method for manufacturing a semiconductor device including an oxide semiconductor film that is formed by using the oxide sintered material as a sputter target.