The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

Jan. 05, 2018
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Ernesto Lasalandra, San Donato Milanese, IT;

Angelo Merassi, Caponago, IT;

Sarah Zerbini, Fontanellato, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01); G01C 19/56 (2012.01); G01C 19/5755 (2012.01); G01P 1/00 (2006.01); G01P 15/125 (2006.01); G01P 15/18 (2013.01); H03H 9/02 (2006.01); G01P 15/08 (2006.01);
U.S. Cl.
CPC ...
B81C 1/0069 (2013.01); B81B 3/0081 (2013.01); B81C 1/00158 (2013.01); B81C 1/00666 (2013.01); G01C 19/56 (2013.01); G01C 19/5755 (2013.01); G01P 1/006 (2013.01); G01P 15/125 (2013.01); G01P 15/18 (2013.01); H03H 9/02448 (2013.01); B81B 2201/025 (2013.01); G01P 2015/0814 (2013.01); H03H 2009/02496 (2013.01); Y10T 29/43 (2015.01);
Abstract

A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.


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