The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
Sep. 26, 2016
Applicant:
Hewlett-packard Development Company, L.p., Fort Collins, CO (US);
Inventors:
Zhizhang Chen, Corvallis, OR (US);
Mohammed S Shaarawi, Corvallis, OR (US);
Jeremy Sells, Corvallis, OR (US);
Assignee:
Hewlett-Packard Development Company, L.P., Spring, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J 2/14 (2006.01); B41J 2/16 (2006.01); C23C 4/134 (2016.01); C23C 4/04 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
B41J 2/14129 (2013.01); B41J 2/1601 (2013.01); B41J 2/1629 (2013.01); B41J 2/1642 (2013.01); B41J 2/1646 (2013.01); C23C 4/04 (2013.01); C23C 4/134 (2016.01); C23C 16/45536 (2013.01); B41J 2202/11 (2013.01);
Abstract
A thin film stack can include a metal substrate having a thickness of from 200 angstroms to 5000 angstroms and a passivation barrier disposed on the metal substrate at a thickness of from 600 angstroms to 1650 angstroms. The passivation barrier can include a dielectric layer and an atomic layer deposition (ALD) layer disposed on the dielectric layer. The dielectric layer can have a thickness of from 550 to 950 angstroms. The ALD layer can have a thickness from 50 to 700 angstroms.