The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Nov. 25, 2019
Applicant:
Stmicroelectronics (Research & Development) Limited, Marlow, GB;
Inventor:
Filip Kaklin, Edinburgh, GB;
Assignee:
STMicroelectronics (Research & Development) Limited, Marlow, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/00 (2006.01); H01L 27/14 (2006.01); H03K 19/003 (2006.01); H01L 27/144 (2006.01); H01L 27/16 (2006.01); H01L 27/146 (2006.01); H01L 31/02 (2006.01);
U.S. Cl.
CPC ...
H03K 19/00361 (2013.01); H01L 27/1443 (2013.01); H01L 27/1446 (2013.01); H01L 27/14605 (2013.01); H01L 27/14643 (2013.01); H01L 27/16 (2013.01); H01L 31/02005 (2013.01);
Abstract
A metal oxide semiconductor (MOS) transistor has a source terminal, a drain terminal, a gate terminal and a body terminal. The source terminal is connected to receive a supply voltage and the body terminal is connected to receive a reverse body bias voltage. A photovoltaic circuit has a first terminal connected to the source terminal of the MOS transistor and a second terminal connected to the body terminal of the MOS transistor. The photovoltaic circuit converts received photons from the environment to generate the reverse body bias voltage.