The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

Dec. 20, 2018
Applicant:

Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);

Inventors:

Koon Hoo Teo, Lexington, MA (US);

Pin Chun Shen, Cambridge, MA (US);

Chungwei Lin, Cambridge, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03H 1/00 (2006.01); H03H 3/00 (2006.01); H03H 7/06 (2006.01); H03H 1/02 (2006.01);
U.S. Cl.
CPC ...
H03H 1/02 (2013.01); H03H 3/00 (2013.01); H03H 7/06 (2013.01); H03H 2001/0085 (2013.01);
Abstract

Devices, system and methods a circuit, including a resistor, a normal capacitor and a ferroelectric capacitor connected in series. An input terminal to provide an input voltage across the circuit. An output terminal to deliver an output voltage taken across the normal capacitor. The circuit comprises a ferroelectric layer sandwiched between a first buffer layer and a second buffer layer. The first buffer layer contacts a portion of a first metal layer and first metal layer extends beyond the first buffer layer. A dielectric layer sandwiched between a second metal layer and a third metal layer. Such that the second metal layer extends beyond the dielectric layer and in contact with the second buffer layer. Wherein the ferroelectric capacitor is formed by the first metal layer. The ferroelectric layer sandwiched between the first buffer layer and the second buffer layer, and the second metal layer.


Find Patent Forward Citations

Loading…