The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

May. 31, 2016
Applicant:

Iljin Electric Co., Ltd., Gyeonggi-do, KR;

Inventors:

Cheol Ho Park, Gyeonggi-do, KR;

Min Hyun Kim, Seoul, KR;

Young Pil Choi, Gyeonggi-do, KR;

Seon Kyong Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); C01B 33/037 (2006.01); H01M 10/0525 (2010.01); H01M 10/052 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/366 (2013.01); C01B 33/037 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/362 (2013.01); H01M 4/386 (2013.01); H01M 10/0525 (2013.01); C01P 2002/70 (2013.01); H01M 10/052 (2013.01); H01M 2004/027 (2013.01);
Abstract

Provided are a negative electrode active material for a secondary battery, which suppresses a dispersal phenomenon of a negative electrode active material during charging/discharging by controlling a lattice mismatch ratio of an amorphous matrix layer to a silicon layer in a silicon-based negative electrode active material.


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