The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Jul. 02, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jeonghee Park, Hwaseong-si, KR;
Jiho Park, Suwon-si, KR;
Changyup Park, Hwaseong-si, KR;
Dongho Ahn, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/141 (2013.01);
Abstract
A variable resistance memory device may include insulating layers stacked on a substrate, a first conductive line penetrating the insulating layers, switching patterns between the insulating layers, a phase change pattern between the first conductive line and each of the switching patterns, and a capping pattern disposed between the phase change pattern and the first conductive line and disposed in a region surrounded by the phase change pattern.