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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10892409 B1

PDFFull Text
Date of Patent:
Jan. 12, 2021

Filed:

Jan. 18, 2019

Switching device, method of fabricating the same, and non-volatile memory device having the same

Applicants:

SK Hynix Inc., Icheon, KR;

Seoul National University R&db Foundation, Seoul, KR;

Inventors:

Hyeong Joon Kim, Seongnam, KR;

Ji Woon Park, Incheon, KR;

Young Seok Kim, Seoul, KR;

Assignees:

SK hynix Inc., Icheon, KR;

Seoul National University R&DB Foundation, Seoul, KR;

Attorney:
Primary Examiner:

Duy T Nguyen

Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/10 (2013.01); H01L 27/224 (2013.01); H01L 27/2409 (2013.01); H01L 45/085 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01); H01L 45/1641 (2013.01); H01L 45/1233 (2013.01); H01L 45/14 (2013.01);
Abstract

The present invention relates to a switching device, a method of fabricating the same, and a nonvolatile memory device including the same. A switching device according to an embodiment of the present invention includes a first electrode; a second electrode; and a switching film which is disposed between the first electrode and the second electrode, and includes an electrically insulating matrix and a conductive path formed in the electrically insulating matrix. In this embodiment, the conductive path includes crystalline metal clusters dispersed in the electrically insulating matrix and a metal bridge connecting adjacent crystalline metal clusters.

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Kim, Hyeong. (2021). Switching device, method of fabricating the same, and non-volatile memory device having the same (U.S. Patent No. 10892409). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10892409

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