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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10892401 B1

PDFFull Text
Date of Patent:
Jan. 12, 2021

Filed:

Sep. 18, 2019

Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory

Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Tomoyuki Sasaki, Tokyo, JP;

Tohru Oikawa, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Bo Fan

Int. Cl.
CPC ...
H01L 43/06 (2006.01); H01L 43/08 (2006.01); H03B 15/00 (2006.01); G11B 5/39 (2006.01); H01L 29/82 (2006.01); H01L 27/105 (2006.01); H01F 10/32 (2006.01); G11C 11/18 (2006.01); G11C 11/16 (2006.01); H01L 43/04 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/14 (2006.01); G01R 33/09 (2006.01);
U.S. Cl.
CPC ...
H01L 43/06 (2013.01); G01R 33/098 (2013.01); G11B 5/39 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); G11C 11/18 (2013.01); H01F 10/32 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01L 27/105 (2013.01); H01L 27/222 (2013.01); H01L 29/82 (2013.01); H01L 43/02 (2013.01); H01L 43/04 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/14 (2013.01); H03B 15/00 (2013.01); H03B 15/006 (2013.01); H01F 10/3286 (2013.01);
Abstract

This spin current magnetization rotational element includes a second ferromagnetic metal layerhaving a variable magnetization orientation, and spin-orbit torque wiring, which extends in a direction that intersects a direction perpendicular to the surface of the second ferromagnetic metal layer, and is connected to the second ferromagnetic metal layer, wherein the spin resistance of a connection portion of the spin-orbit torque wiring layerthat is connected to the second ferromagnetic metal layeris larger than the spin resistance of the second ferromagnetic metal layer

Find Patent Forward Citations

Sasaki, Tomoyuki. (2021). Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory (U.S. Patent No. 10892401). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10892401

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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