The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

Feb. 03, 2017
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Jae Won Seo, Seoul, KR;

Sang Youl Lee, Seoul, KR;

Woo Sik Lim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/42 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/10 (2010.01); H01L 33/46 (2010.01); H01L 33/32 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/10 (2013.01); H01L 33/325 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/22 (2013.01); H01L 33/46 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A light-emitting element according to an embodiment comprises: a light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer formed between the first and second conductive type semiconductor layers; a reflective layer formed on the second conductive type semiconductor layer; a capping layer formed on the reflective layer to surround the reflective layer; a first electrode electrically connected with the first conductive type semiconductor layer; a first bonding pad electrically connected with the first electrode; and a second bonding pad electrically connected with the second electrode, wherein the light-emitting structure includes a recess extending to a region of the first conductive type semiconductor layer through the second conductive type semiconductor layer and the active layer; the first electrode is formed within the recess and electrically connected with the first conductive type semiconductor layer, and includes a region bent along a side surface of the second bonding pad; the reflective layer is formed to be spaced apart from the recess; and the capping layer includes a transparent electrode.


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