The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Aug. 16, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Tomohiro Imai, Ibaraki, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/41708 (2013.01); H01L 29/66348 (2013.01);
Abstract
An IGBT with improved switching characteristics is disclosed. The contact hole CHin which the emitter potential electrode EE is buried is formed at a position overlapping with the trench Tin which the gate electrode Gis buried in plan view. The upper surface of gate electrode Gin trench Tis retracted, and an interlayer insulating film ILis formed on the top of trench T. Since the bottom of the contact hole CHis located on the interlayer insulating film ILin the trench Tand in the base region PB, the emitter potential electrode EE is not in contact with the gate electrode G