The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Jul. 27, 2017
Rohm Co., Ltd., Kyoto, JP;
Seigo Mori, Kyoto, JP;
Masatoshi Aketa, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
[Object] To provide a semiconductor device which can achieve not only satisfactory switching characteristics in both a small current region and a large current region but also a satisfactory reverse withstand voltage. [Solution Means] A semiconductor device is provided that includes a semiconductor layer having a front surface, a back surface on a side opposite thereto, and an end surface, an MIS transistor structure which is formed on a front surface portion of the semiconductor layer, a first conductivity type portion and a second conductivity type portion which are formed adjacent to each other on the side of the back surface of the semiconductor layer, and a first electrode which is formed on the back surface of the semiconductor layer, which forms a Schottky junction with the first conductivity type portion and which is in ohmic contact with the second conductivity type portion.