The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
May. 01, 2018
Applicant:
Microsoft Technology Licensing, Llc, Redmond, WA (US);
Inventors:
Satyadev Hulikal Nagaraja, San Jose, CA (US);
Onur Can Akkaya, Palo Alto, CA (US);
Cyrus Soli Bamji, Fremont, CA (US);
Assignee:
Microsoft Technology Licensing, LLC, Redmond, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/18 (2006.01); H01L 31/0352 (2006.01); H01L 31/103 (2006.01); H04N 9/04 (2006.01); H04N 5/33 (2006.01); H01L 31/028 (2006.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
H01L 27/14687 (2013.01); H01L 27/1462 (2013.01); H01L 27/1464 (2013.01); H01L 27/1465 (2013.01); H01L 27/14627 (2013.01); H01L 27/14629 (2013.01); H01L 27/14698 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/035272 (2013.01); H01L 31/103 (2013.01); H01L 31/1804 (2013.01); H01L 31/1812 (2013.01); H04N 5/33 (2013.01); H04N 9/045 (2013.01);
Abstract
An imaging sensor array comprises an epitaxial germanium layer disposed on a silicon layer, and an electrically biased photoelectron collector arranged on the silicon layer, on a side opposite the germanium layer.