The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Apr. 29, 2019
Applicants:
SK Hynix Inc., Icheon, KR;
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Inventors:
Assignees:
SK hynix Inc., Icheon, KR;
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 29/105 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/7828 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01);
Abstract
A junctionless vertical gate transistor includes an active pillar vertically protruding from a substrate and including a first impurity region, a second impurity region and a third impurity region sequentially formed over the first impurity region; gate electrodes coupled to sidewalls of the second impurity region; and bit lines arranged in a direction of intersecting with the gate electrodes and each contacting the first impurity region. The first to the third impurity regions include impurities of the same polarity.