The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Sep. 03, 2019
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Takanobu Ono, Kuwana, JP;
Tsutomu Fujita, Yokkaichi, JP;
Ippei Kume, Yokkaichi, JP;
Akira Tomono, Yokkaichi, JP;
Assignee:
Toshiba Memory Corporation, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/32 (2006.01); H01L 23/00 (2006.01); H01L 23/544 (2006.01); H01L 21/428 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/428 (2013.01); H01L 23/544 (2013.01); H01L 29/32 (2013.01); H01L 2223/5446 (2013.01);
Abstract
A semiconductor device according to an embodiment includes a semiconductor substrate comprising a first face, and a second face on an opposite side to the first face. A semiconductor element is provided on the first face of the semiconductor substrate. A polycrystalline or non-crystalline first material layer is provided at least on an outer edge of the first face of the semiconductor substrate. A second material layer is provided on the second face of the semiconductor substrate. The second material layer transmits laser light.