The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

Nov. 29, 2018
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventor:

Dietrich Bonart, Bad Abbach, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 23/3114 (2013.01); H01L 23/49816 (2013.01); H01L 23/49894 (2013.01); H01L 23/544 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54473 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06527 (2013.01);
Abstract

A semiconductor chip includes a mounting surface having a plurality of first conductive contacts and at least one second conductive contact. Each of the first contacts is arranged in a regularly spaced apart array such that centroids of immediately adjacent first contacts are separated from one another in a first direction by a first distance. Each of the first contacts have an identical first lateral extent. The second conductive contact is at least partially within an area which has the first lateral extent and is separated from an immediately first contact by the first distance. Either the second conductive contact has a second lateral extent that is less than the first lateral extent; or a centroid of the second conductive contact is separated in the first direction from the centroid of one of the first contacts by a second distance that is different from the first distance.


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