The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Mar. 01, 2019
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventors:
Takanobu Ono, Mie, JP;
Yusuke Dohmae, Mie, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); B23K 26/40 (2014.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); B23K 26/40 (2013.01); B23K 2101/40 (2018.08);
Abstract
A method of manufacturing a semiconductor device, includes irradiating a division region of a semiconductor wafer with laser to form a plurality of modified portions arranged in a direction along the division region in the semiconductor wafer, and splitting the semiconductor wafer into a plurality of semiconductor chips using a groove generated from the plurality of modified portions in the semiconductor wafer. The plurality of modified portions is at a first interval in a first part of the division region and at a second interval smaller than the first interval in a second part of the division region.