The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Dec. 17, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Gerhard Schmidt, Wernberg, AT;
Mario Barusic, Seebogen, AT;
Benedikt Stoib, Feldkirchen-Westerham, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 27/06 (2006.01); H01L 29/32 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/167 (2006.01); H01L 29/207 (2006.01); H01L 29/36 (2006.01); H01L 21/265 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3223 (2013.01); H01L 21/265 (2013.01); H01L 27/0629 (2013.01); H01L 27/0664 (2013.01); H01L 28/10 (2013.01); H01L 29/167 (2013.01); H01L 29/207 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/66136 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01); H01L 29/861 (2013.01); H01L 29/8611 (2013.01);
Abstract
A method for forming a semiconductor device includes incorporating recombination center atoms into a semiconductor substrate. The method further includes, after incorporating the recombination center atoms into the semiconductor substrate, implanting noble gas atoms into a doping region of a diode structure and/or a transistor structure, the doping region being arranged at a surface of the semiconductor substrate.