The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

May. 08, 2017
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Jacob Huffman Woodruff, Phoenix, AZ (US);

Bed Sharma, Gilbert, AZ (US);

Eric James Shero, Phoenix, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/033 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/345 (2013.01); C23C 16/4554 (2013.01); C23C 16/45553 (2013.01); H01L 21/0217 (2013.01); H01L 21/0234 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/0332 (2013.01); H01L 21/31111 (2013.01);
Abstract

A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition process, wherein the cyclical deposition process comprises at least one of; contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source. The method may also include exposing the cyclical silicon nitride film to a plasma. Semiconductor device structures comprising a silicon nitride film are also disclosed.


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