The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Feb. 12, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/16 (2006.01); G11C 8/12 (2006.01); H01L 27/11573 (2017.01); H01L 27/11582 (2017.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/0483 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); G11C 16/14 (2013.01);
Abstract
A method of operating a nonvolatile memory device includes erasing data within a NAND string of memory cells within the memory device by applying a non-zero erase voltage to a source/drain terminal at a first end of the NAND string. This erase voltage is applied concurrently with establishing gate-induced drain leakage (GIDL) in a pair of selection transistors within the NAND string. This GIDL can occur by applying unequal and non-zero first and second voltages to respective first and second gate terminals of the pair of selection transistors. The selection transistors can be string selection transistors or ground selection transistors.